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MMBZ12VALT1G

Manufacturer:

On Semiconductor

Mfr.Part #:

MMBZ12VALT1G

Datasheet:
Description:

TVS Diodes SOT-23-3 SMD/SMT Working Voltage:8.5 V Breakdown Voltage:11.4 V Clamping Voltage:17 V Peak Pulse Power:40 W Polarity:Unidirectional

ParameterValue
Voltage Rating (DC)12 V
Length2.9 mm
Width1.4 mm
TerminationSMD/SMT
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Leakage Current200 nA
Power Rating40 W
Composition(Kit Type)Zener
Height1.01 mm
Depth1.3 mm
Radiation HardeningNo
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements2
Working Voltage8.5 V
Forward Voltage900 mV
Operating Supply Voltage8.5 V
Power Dissipation40 W
Max Output Current2.35 A
Peak Pulse Current2.35 A
Number of Channels2
Breakdown Voltage11.4 V
Max Reverse Leakage Current200 nA
Element ConfigurationCommon Anode
Direction(Counting Sequence)Unidirectional
Min Breakdown Voltage11.4 V
Reverse Standoff Voltage8.5 V
Clamping Voltage17 V
Peak Pulse Power40 W
Power Line ProtectionNo
Number of Unidirectional Channels2
Max Surge Current2.35 A
Number of Bidirectional Channels1
Reverse Breakdown Voltage11.4 V
ESD ProtectionYes
Test Current1 mA
Max Breakdown Voltage12.6 V
RoHSCompliant
PolarityUnidirectional
PackagingReel
Voltage ESD Contact30 kV

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